6
RF Device Data
Freescale Semiconductor, Inc.
MRF6VP3091NR1 MRF6VP3091NR5
MRF6VP3091NBR1 MRF6VP3091NBR5
TYPICAL CHARACTERISTICS ? TWO--TONE (SINGLE--ENDED NARROWBAND TEST CIRCUIT)
Figure 9. Intermodulation Distortion Products
versus Output Power
-- 7 0
-- 1 0
10
7th Order
Pout, OUTPUT POWER (WATTS) PEP
VDD
=50Vdc,IDQ
= 350 mA, f1 = 854 MHz
f2 = 860 MHz, Two--Tone Measurements
3rd Order
-- 2 0
-- 3 0
-- 4 0
IMD, INTERMODULATIO
N DISTORTION (dBc)
-- 6 0
5th Order
1
-- 5 0
100 200
Figure 10. Intermodulation Distortion
Products versus Two--Tone Spacing
10
-- 2 0
1
7th Order
TWO--TONE SPACING (MHz)
5th Order
3rd Order
-- 3 5
-- 4 5
-- 5 5
90
IMD, INTERMODULATIO
N DISTORTION (dBc)
-- 6 5
-- 2 5
VDD
=50Vdc,Pout
= 90 W (PEP), IDQ
= 350 mA
f = 860 MHz, Two--Tone Measurements
-- 3 0
-- 4 0
-- 5 0
-- 6 0
Figure 11. Two--Tone Power Gain versus
Output Power
20
23.5
1
IDQ
= 450 mA
Pout, OUTPUT POWER (WATTS) PEP
23
20.5
10 200100
G
ps
, POWER GAIN (dB)
22.5
21.5
VDD
= 50 Vdc, f1 = 854 MHz, f2 = 860 MHz
Two--Tone Measurements, 6 MHz Tone Spacing
21
250 mA
22
300 mA
350 mA
Figure 12. Third Order Intermodulation
Distortion versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
10
VDD
= 50 Vdc, f1 = 854 MHz, f2 = 860 MHz
Two--Tone Measurements, 6 MHz Tone Spacing
100
1
IDQ
= 250 mA
300 mA
350 mA
450 mA
-- 2 0
-- 4 0
-- 5 0
-- 6 0
-- 1 0
-- 3 0
INTERMODULATION D
ISTORTION (dBc)
IMD, THIRD ORDER
200
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相关代理商/技术参数
MRF6VP3091NBR5
功能描述:射频MOSFET电源晶体管 VHV6 50V 4.5W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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